Antisleep Alarm for Students - Seminar Report

Introduction

While actually giving in to our body’s natural wants such as sleep, we’re keeping the balance beam in an upright and neutral position — generally a good thing to do. But life comes and calls quite often, many times forcing us to put hunger, drowsiness, and other basic human needs on the back burner in order to seal the deal and get the job done. 

So here’s the scenario, you’re sitting in your car getting ready for a big meeting that if completed will net your company nice little multi-billion dollar deal. You’re supposed to be going over your notes and preparing yourself for this staple achievement. But instead, you find yourself doing the whole bobble head thing, getting dangerously to the steering wheel with each and every bob. If only there were something to keep you awake…

This circuit saves both time and electricity for students. It helps to prevent them from dozing off while studying, by sounding a beep at a fixed time interval, say, 30 minutes.

If the student is awake during the beep, he can reset the circuit to beep in the next 30 minutes. If the timer is not reset during this time, it means the student is in deep sleep or not in the room, and the circuit switches off the light and fan in the room, thus preventing the wastage of electricity.

Relay

A relay is an electrically operated switch. Many relays use an electromagnet to operate a switching mechanism mechanically, but other operating principles are also used. Relays are used where it is necessary to control a circuit by a low-power signal (with complete electrical isolation between control and controlled circuits), or where several circuits must be controlled by one signal. The first relays were used in long distance telegraph circuits, repeating the signal coming in from one circuit and re-transmitting it to another. Relays were used extensively in telephone exchanges and early computers to perform logical operations.

Working 

A type of relay that can handle the high power required to directly drive an electric motor is called a contractor. Solid-state relays control power circuits with no moving parts, instead using a semiconductor device to perform switching. Relays with calibrated operating characteristics and sometimes multiple operating coils are used to protect electrical circuits from overload or faults; in modern electric power systems these functions are performed by digital instruments still called "protective relays".

Transistor

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its release in the early 1950s the transistor revolutionised the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, amongst other things.

A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

Introduction

NPN BJT with forward-biased E–B junction and reverse-biased B–C junction

An NPN transistor can be considered as two diodes with a shared anode. In typical operation, the base-emitter junction is forward biased and the base–collector junction is reverse biased. In an NPN transistor, for example, when a positive voltage is applied to the base–emitter junction, the equilibrium between thermally generated carriers and the repelling electric field of the depletion region becomes unbalanced, allowing thermally excited electrons to inject into the base region. These electrons wander (or "diffuse") through the base from the region of high concentration near the emitter towards the region of low concentration near the collector. The electrons in the base are called minority carriers because the base is doped p-type which would make holes the majority carrier in the base.

To minimize the percentage of carriers that recombine before reaching the collector–base junction, the transistor's base region must be thin enough that carriers can diffuse across it in much less time than the semiconductor's minority carrier lifetime. In particular, the thickness of the base must be much less than the diffusion length of the electrons. The collector–base junction is reverse-biased, and so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collector–base junction. The thin shared base and asymmetric collector–emitter doping is what differentiates a bipolar transistor from two separate and oppositely biased diodes connected in series.

Voltage, current, and charge control

The collector–emitter current can be viewed as being controlled by the base–emitter current (current control), or by the base–emitter voltage (voltage control). These views are related by the current–voltage relation of the base–emitter junction, which is just the usual exponential current–voltage curve of a p-n junction (diode)

The physical explanation for collector current is the amount of minority-carrier charge in the base region.Detailed models of transistor action, such as the Gummel–Poon model, account for the distribution of this charge explicitly to explain transistor behavior more exactly.The charge-control view easily handles phototransistors, where minority carriers in the base region are created by the absorption of photons, and handles the dynamics of turn-off, or recovery time, which depends on charge in the base region recombining. However, because base charge is not a signal that is visible at the terminals, the current- and voltage-control views are generally used in circuit design and analysis.

In analog circuit design, the current-control view is sometimes used because it is approximately linear. That is, the collector current is approximately βF times the base current. Some basic circuits can be designed by assuming that the emitter–base voltage is approximately constant, and that collector current is beta times the base current. However, to accurately and reliably design production BJT circuits, the voltage-control (for example, Ebers–Moll) model is required[1]. The voltage-control model requires an exponential function to be taken into account, but when it is linearized such that the transistor can be modelled as a transconductance, as in the Ebers–Moll model, design for circuits such as differential amplifiers again becomes a mostly linear problem, so the voltage-control view is often preferred. For translinear circuits, in which the exponential I–V curve is key to the operation, the transistors are usually modelled as voltage controlled with transconductance proportional to collector current. In general, transistor level circuit design is performed using SPICE or a comparable analogue circuit simulator, so model complexity is usually not of much concern to the designer.

Turn-on, turn-off, and storage delay

The Bipolar transistor exhibits a few delay characteristics when turning on and off. Most transistors, and especially power transistors, exhibit long base storage time that limits maximum frequency of operation in switching applications. One method for reducing this storage time is by using a Baker clamp.

Transistor 'alpha' and 'beta' 

The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The heavy doping of the emitter region and light doping of the base region cause many more electrons to be injected from the emitter into the base than holes to be injected from the base into the emitter. The common-emitter current gain is represented by βF or hfe; it is approximately the ratio of the DC collector current to the DC base current in forward-active region. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. Another important parameter is the common-base current gain, αF. The common-base current gain is approximately the gain of current from emitter to collector in the forward-active region. This ratio usually has a value close to unity; between 0.98 and 0.998. Alpha and beta are more precisely related by the following identities (NPN transistor):

Structure

high-frequency NPN transistor, base and emitter connected via bonded wires

A BJT consists of three differently doped semiconductor regions, the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP, and n type, p type and n type in a NPN transistor. Each semiconductor region is connected to a terminal, appropriately labeled: emitter (E), base (B) and collector (C).

The base is physically located between the emitter and the collector and is made from lightly doped, high resistivity material. The collector surrounds the emitter region, making it almost impossible for the electrons injected into the base region to escape being collected, thus making the resulting value of α very close to unity, and so, giving the transistor a large β. A cross section view of a BJT indicates that the collector–base junction has a much larger area than the emitter–base junction.

NPN is one of the two types of bipolar transistors, in which the letters "N" (negative) and "P" (positive) refer to the majority charge carriers inside the different regions of the transistor. Most bipolar transistors used today are NPN, because electron mobility is higher than hole mobility in semiconductors, allowing greater currents and faster operation.

NPN transistors consist of a layer of P-doped semiconductor (the "base") between two N-doped layers. A small current entering the base in common-emitter mode is amplified in the collector output. In other terms, an NPN transistor is "on" when its base is pulled high relative to the emitter.

The arrow in the NPN transistor symbol is on the emitter leg and points in the direction of the conventional current flow when the device is in forward active mode.

One mnemonic device for identifying the symbol for the NPN transistor is "not pointing in, or 'not pointing, no' "

Diode

Introduction 

in electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals.[1] A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.

The most common function of a diode is to allow an electric current to pass in one direction (called the diode's forward bias direction) while blocking current in the opposite direction (the reverse direction). Thus, the diode can be thought of as an electronic version of a check valve. This unidirectional behavior is called rectification, and is used to convert alternating current to direct current, and to extract modulation from radio signals in radio receivers.

However, diodes can have more complicated behavior than this simple on-off action. This is due to their complex non-linear electrical characteristics, which can be tailored by varying the construction of their P-N junction. These are exploited in special purpose diodes that perform many different functions. For example, specialized diodes are used to regulate voltage (Zener diodes), to electronically tune radio and TV receivers (varactor diodes), to generate radio frequency oscillations (tunnel diodes), and to produce light (light emitting diodes). Tunnel diodes exhibit negative resistance, which makes them useful in some types of circuits.

Semiconductor diodes

A modern semiconductor diode is made of a crystal of semiconductor like silicon that has impurities added to it to create a region on one side that contains negative charge carriers (electrons), called n-type semiconductor, and a region on the other side that contains positive charge carriers (holes), called p-type semiconductor. The diode's terminals are attached to each of these regions. The boundary within the crystal between these two regions, called a PN junction, is where the action of the diode takes place. The crystal conducts conventional current in a direction from the p-type side (called the anode) to the n-type side (called the cathode), but not in the opposite direction.

Another type of semiconductor diode, the Schottky diode, is formed from the contact between a metal and a semiconductor rather than by a p-n junction.

Current–voltage characteristic

A semiconductor diode’s behavior in a circuit is given by its current–voltage characteristic, or I–V graph (see graph below). The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer or depletion region that exists at the p-n junction between differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (vacant places for electrons) with which the electrons “recombine”. When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor (dopant) on the N-side and negatively charged acceptor (dopant) on the P-side. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator.

However, the width of the depletion region (called the depletion width) cannot grow without limit. For each electron-hole pair that recombines, a positively charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then finally stop recombination. At this point, there is a “built-in” potential across the depletion zone.

If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless electron/hole pairs are actively being created in the junction by, for instance, light. see photodiode). This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the p-n junction (i.e. substantial numbers of electrons and holes recombine at the junction). For silicon diodes, the built-in potential is approximately 0.7 V (0.3 V for Germanium and 0.2 V for Schottky). Thus, if an external current is passed through the diode, about 0.7 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be “turned on” as it has a forward bias.

At very large reverse bias, beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs which causes a large increase in current (i.e. a large number of electrons and holes are created at, and move away from the pn junction) that usually damages the device permanently. The avalanche diode is deliberately designed for use in the avalanche region. In the zener diode, the concept of PIV is not applicable. A zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is “clamped” to a known value (called the zener voltage), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power in the clamped reverse voltage region. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases.

The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range). However, this is temperature dependent, and at suffiently high temperatures, a substantial amount of reverse current can be observed (mA or more).

The third region is forward but small bias, where only a small forward current is conducted.

As the potential difference is increased above an arbitrarily defined “cut-in voltage” or “on-voltage” or “diode forward voltage drop (Vd)”, the diode current becomes appreciable (the level of current considered “appreciable” and the value of cut-in voltage depends on the application), and the diode presents a very low resistance. The current–voltage curve is exponential. In a normal silicon diode at rated currents, the arbitrary “cut-in” voltage is defined as 0.6 to 0.7 volts. The value is different for other diode types — Schottky diodes can be rated as low as 0.2 V, Germanium diodes 0.25-0.3 V, and red or blue light-emitting diodes (LEDs) can have values of 1.4 V and 4.0 V respectively.

At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at full rated current for power diodes.

Switch

Introduction

In electronics, a switch is an electrical component that can break an electrical circuit, interrupting the current or diverting it from one conductor to another.[1][2] The most familiar form of switch is a manually operated electromechanical device with one or more sets of electrical contacts. Each set of contacts can be in one of two states: either 'closed' meaning the contacts are touching and electricity can flow between them, or 'open', meaning the contacts are separated and nonconducting. This is called a PTM or "Push to Make" switch.

A switch may be directly manipulated by a human as a control signal to a system, such as a computer keyboard button, or to control power flow in a circuit, such as a light switch. Automatically-operated switches can be used to control the motions of machines, for example, to indicate that a garage door has reached its full open position or that a machine tool is in a position to accept another workpiece. Switches may be operated by process variables such as pressure, temperature, flow, current, voltage, and force, acting as sensors in a process and used to automatically control a system. For example, a thermostat is a temperature-operated switch used to control a heating process. A switch that is operated by another electrical circuit is called a relay. Large switches may be remotely operated by a motor drive mechanism. Some switches are used to isolate electric power from a system, providing a visible point of isolation that can be pad-locked if necessary to prevent accidental operation of a machine during maintenance, or to prevent electric shock.

Resistor

Introduction 

A resistor is a two-terminal electronic component that produces a voltage across its terminals that is proportional to the electric current through it in accordance with Ohm's law:

V = IR

Resistors are elements of electrical networks and electronic circuits and are ubiquitous in most electronic equipment. Practical resistors can be made of various compounds and films, as well as resistance wire (wire made of a high-resistivity alloy, such as nickel-chrome).

The primary characteristics of a resistor are the resistance, the tolerance, the maximum working voltage and the power rating. Other characteristics include temperature coefficient, noise, and inductance. Less well-known is critical resistance, the value below which power dissipation limits the maximum permitted current, and above which the limit is applied voltage. Critical resistance is determined by the design, materials and dimensions of the resistor.

Resistors can be integrated into hybrid and printed circuits, as well as integrated circuits. Size, and position of leads (or terminals), are relevant to equipment designers; resistors must be physically large enough not to overheat when dissipating their power

Capacitor

Introduction

A capacitor (formerly known as condenser) is a passive electronic component consisting of a pair of conductors separated by a dielectric (insulator). When there is a potential difference (voltage) across the conductors, a static electric field develops in the dielectric that stores energy and produces a mechanical force between the conductors. An ideal capacitor is characterized by a single constant value, capacitance, measured in farads. This is the ratio of the electric charge on each conductor to the potential difference between them

 .

Capacitors are widely used in electronic circuits for blocking direct current while allowing alternating current to pass, in filter networks, for smoothing the output of power supplies, in the resonant circuits that tune radios to particular frequencies and for many other purposes.

The effect is greatest when there is a narrow separation between large areas of conductor, hence capacitor conductors are often called "plates", referring to an early means of construction. In practice the dielectric between the plates passes a small amount of leakage current and also has an electric field strength limit, resulting in a breakdown voltage, while the conductors and leads introduce an undesired inductance and resistance.

Operation

A capacitor consists of two conductors separated by a non-conductive region called the dielectric medium though it may be a vacuum or a semiconductor depletion region chemically identical to the conductors. A capacitor is assumed to be self-contained and isolated, with no net electric charge and no influence from any external electric field. The conductors thus hold equal and opposite charges on their facing surfaces,and the dielectric develops an electric field. In SI units, a capacitance of one farad means that one coulomb of charge on each conductor causes a voltage of one volt across the device.

The capacitor is a reasonably general model for electric fields within electric circuits. An ideal capacitor is wholly characterized by a constant capacitance C, defined as the ratio of charge ±Q on each conductor to the voltage V between them:

Integrated circuit

In electronics, an integrated circuit (also known as IC, chip, or microchip) is a miniaturized electronic circuit (consisting mainly of semiconductor devices, as well as passive components) that has been manufactured in the surface of a thin substrate of semiconductor material. Integrated circuits are used in almost all electronic equipment in use today and have revolutionized the world of electronics. Computers, cellular phones, and other digital appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of production of integrated circuits.

A hybrid integrated circuit is a miniaturized electronic circuit constructed of individual semiconductor devices, as well as passive components, bonded to a substrate or circuit board. A monolithic integrated circuit is made of devices manufactured by diffusion of trace elements into a single piece of semiconductor substrate, a chip. 

Ch9,fig 1 Integrated Circuit

Integrated circuits were made possible by experimental discoveries which showed that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. The integration of large numbers of tiny transistors into a small chip was an enormous improvement over the manual assembly of circuits using electronic components. The integrated circuit's mass production capability, reliability, and building-block approach to circuit design ensured the rapid adoption of standardized ICs in place of designs using discrete transistors.

There are two main advantages of ICs over discrete circuits: cost and performance. Cost is low because the chips, with all their components, are printed as a unit by photolithography and not constructed as one transistor at a time. Furthermore, much less material is used to construct a circuit as a packaged IC die than as a discrete circuit. Performance is high since the components switch quickly and consume little power (compared to their discrete counterparts) because the components are small and close together. As of 2006, chip areas range from a few square millimeters to around 350 mm2, with up to 1 million transistors per mm2

Conclusion

This circuit saves both time and electricity for students. It helps to prevent them from dozing off while studying, by sounding a beep at a fixed time interval, say, 30 minutes.

If the student is awake during the beep, he can reset the circuit to beep in the next 30 minutes. If the timer is not reset during this time, it means the student is in deep sleep or not in the room, and the circuit switches off the light and fan in the room, thus preventing the wastage of electricity.